A shunt type RF MEMS switch design and analysis are presented in this paper for tunable applications. Switch operations are based on the principle of electrostatic actuation. The electromechanical and electromagnetic simulation tests were contrasted with the hypothetical measured switch parameters. The effect of different materials such as conductor and dielectrics & parameters such as air gap, beam width on the switch's electromechanical parameters is analyzed to obtain low pull-in voltage, high switching speed, better capacitance ratio, return loss, insertion loss, and insulation loss. The condition capacitance of the turn up and down is 40.9fF and 4.45pF respectively. The switch's down to state capacity ratio is 108.69. The designed switch has a 32V voltage of actuation. Simulation of RF output from 1-10GHz. The return loss in the ON state shift (switch) is-35dB, the insertion loss is-0.1dB. There is a return loss of -1dB in the OFF-state switch and a loss of -11dB in isolation.
RF MEMS switch, electrostatic actuation, tunable application, insulation loss, insertion loss, switching speed.
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