This paper details about research developments in nanometer scale for making integrated electronic devices. The nano circuits are majority used in digital circuits design, printed design boards, radio frequency (RF) signal processing, high quality precision sensors, etc. The efficient Metal Oxide Field Effect Transistor designs have very low power and are economical in fabrication. But as they are limited in ION/IOFF Ratio, due to the need for faster switching devices at nanometer technology, new devices are developed. Among the various devices developed, Double-gate field-effect diode (DGFED) exhibit excellent features such as lesser short-channel effects, lesser OFF current (IOFF) and greater ON current (ION). Double Gate FED (DGFED) suppresses the Short channel effects and significantly improves ION/ IOFF ratio. DGFED have lesser gate delay, larger Energy Delay Product (EDP), higher cutoff frequency and larger trans conductance.
Key words: Double Gate Field Effect Diode (DGFED), ION/IOFF, nano electronics, quantum dots, resonant tunneling, short-channel effects (SCEs), Tri-gate transistor.
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