Design and Simulation of a 2.5 GHz High-efficiency Class B Power Amplifier Using GaN Transistor for Mobile Communication Applications

NJE. 2025; 32(1): 121-131

Abdulrazaq Abdulaziz, Abdulmalik Shehu Yaro, Ashraf Adam Ahmad, Fahad Abdu Jibrin, Abdulmumini Zubairu Loko, Murtala Hassan Dankulu.

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ABSTRACT This paper presents the design and simulation of a 2.5 GHz Class B single-stage RF power amplifier (PA) using a GaN High Electron Mobility Transistor (HEMT). The proposed PA, optimized for the 2.1–2.9 GHz frequency range, leverages GaN HEMT’s high power density, high voltage operation, and low parasitic capacitance to achieve a greater performance. The design delivers 43 dBm of output power, over 50% power-added efficiency (PAE), and 21 dB power gain at the 1 dB gain compression point. Designed with a 48V drain bias voltage and simulated using Advanced Design System (ADS), this work demonstrates a high-performance, efficient PA suitable for wideband RF applications. Key words: Keywords: RF Power Amplifier (PA), Gallium Nitride (GaN), Class B, Input Matching Network (IMN), Output Matching Network (OMN).