This study analyses how different gate oxides used in silicon on insulator (SOI) FinFETs are affected by total ionising radiation (TID). The device under consideration has a three-dimensional (3-D) SOI 30nm n-channel FinFET architecture with gate electrodes made of high-k hafnium oxide (HfO2) and aluminium oxide (Al2O3). Utilizing radiation-specific code for various gate oxides, 3-D simulations of the FinFET device were run in Visual TCAD to examine the impact of TID on the device. The TID effects change the electrical characteristics, causing the device to deteriorate and the systems connected to it to fail.It has been discovered that the trapped charge density of oxide is more than that of interface. The leakage current and transconductance after irradiation rise as a result of TID. For both gate oxide materials, it has been found that the threshold voltage shifts as the ionising radiation exposure increases.
Key words: insulator Silicon, total ionizing dose, fixed charge,FinFET, threshold voltage, interface charge
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