Numerical simulation plays an important role in device understanding. Single-electron devices (SEDs) simulations have done by many groups but the requirement of simulation with complete explanation still exists in particular for beginners. In this paper, a single electron transistor (SET) is simulated. The process of simulation is based on the master equation. The master equation approach takes the transition and tunneling of an electron in a probabilistic manner. The simulation result shows the staircase pattern for current-voltage characteristics, phenomena of Coulomb blockade is also observed. The work is extended by observing the effect of temperature, gate voltage and background charge on characteristics. It is observed that the drain current increases with an increase in operating temperature, but it decreases with an increase in background charge. The Coulomb blockade effect can be reduced at a higher value of gate voltage. This paper shows another approach in device simulation and modeling and can play an important role in the progress of novel small size devices.
SET, tunneling, Coulomb blockade
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